Nanowires based on the III nitride materials system (AlGaInN) have attracted attention as potential nanoscale building blocks in optoelectronics, photovoltaics, photonics, sensing, and electronics.  In order for their full potential to be realized, several challenges exist in the areas of controlled and ordered nanowire synthesis, fabrication of advanced nanowire heterostructures, understanding and controlling the nanowire properties, and integration of nanowires into working devices.  Our research focuses on multiple aspects of III-nitride based nanostructures, from synthesis, to characterization, and to devices.   We are also interested in novel templated and 3D growth techniques to improve material quality and create new functional structures.