Variable-Temperature STM Movies of Si Ad-dimer Diffusion on the Si(001) Surface*

B. S. Swartzentruber and T. Klitsner
Sandia National Laboratories
Albuquerque, NM 87185

This document contains the complete scanning tunneling microscopy (STM) movie image data that are used as figures in, Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy, B. S. Swartzentruber, Phys. Rev. Lett. 76(3), 459 (1996).
[65C Movie]Image 1: Movie of Si dimer diffusion on the Si(001) surface acquired at 65 C. The dimers (white bumps) are stable on top of the substrate rows where they can diffuse. The white bumps located between the rows are clusters that are comprised of three or more atoms -- they do not diffuse. (Substrate defect dynamics are also observed.) Scanning parameters: range ~250 Å, 125×125 pixels, current 0.05 nA, sample bias -2.5 V, frame acquisition rate 29 sec/frame. (Quicktime format 268kb)


[128C Movie #1]Image 2: Movie of a Si dimer diffusing between two substrate defects acquired at 128 C. The dimer is moving too rapidly to be completely imaged in each frame. There are 7 lattice sites between the defects. Scanning parameters: range ~70 Å, 64×64 pixels, current 0.04 nA, sample bias -2.5 V, frame acquisition rate 7.8 sec/frame. (Quicktime format 130kb)


[128C Movie #2]Image 3: Movie of another Si dimer trapped between surface defects at 128 C. There are 11 lattice sites between which this dimer hops. At this temperature the dimer is hopping about 10 times per second. Scanning parameters: range ~95 Å, 64×64 pixels, current 0.04 nA, sample bias -2.5 V, frame acquisition rate 7.8 sec/frame. (Quicktime format 181kb)

Attribution: The reference for this document is: B. S. Swartzentruber and T. Klitsner, Variable-Temperature STM Movies of Si Ad-dimer Diffusion on the Si(001) Surface, SAND95-1763, Sandia National Laboratories, Albuquerque, NM, July 1995.
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