Publications

B. S. Swartzentruber
Sandia National Laboratories
Albuquerque, NM 87185

  1. "Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries", R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 54(25), 2678 (1985).
  2. "Electron Interferometry at Crystal Surfaces", R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 55(9), 987 (1985).
  3. "Tunneling Images of Atomic Steps on the Si(111) 7x7 Surface", R. S. Becker, J. A. Golovchenko, E. G. McRae, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2028 (1985).
  4. "Real-Space Observation of Surface States on Si(111) 7x7 with the Tunneling Microscope", R. S. Becker, J. A. Golovchenko, D. R. Hamann, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2032 (1985).
  5. "Tunneling Images of the 5x5 Surface Reconstruction on GeSi(111)" R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber, Phys. Rev. B, 32(12), 8455 (1985).
  6. "New Reconstructions on Silicon (111) Surfaces", R. S. Becker, J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber, Phys. Rev. Lett. 57(8), 1020 (1986).
  7. "Atomic-scale Surface Modifications Using a Tunneling Microscope", R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Nature, 325(6103), 419 (1987).
  8. "Geometric and Local Electronic Structure of Si(111)-As", R. S. Becker, B. S. Swartzentruber, J. S. Vickers, M. S. Hybertsen, and S. G. Louie, Phys. Rev. Lett. 60(2), 116 (1988).
  9. "Tunneling Microscopy of Silicon and Germanium: Si(111) 7x7, SnGe(111) 7x7, GeSi(111) 5x5, Si(111) 9x9, Ge(111) 2x8, Ge(100) 2x1, Si(110) 5x1", R. S. Becker, B. S. Swartzentruber, and J. S. Vickers, J. Vac. Sci. Tech. A, 6(2), 472 (1988).
  10. "Dimer-adatom-stacking-fault (DAS) and non-DAS (111) Semiconductor Surfaces: A Comparison of Ge(111)-c(2x8) to Si(111)-(2x2),-(5x5),-(7x7), and -(9x9) with Scanning Tunneling Microscopy", R. S. Becker, B. S. Swartzentruber, J. S. Vickers, and T. Klitsner, Phys. Rev. B, 30(3), 1633 (1989).
  11. "Scanning Tunneling Microscopy Studies of Structural Disorder and Steps on Silicon Surfaces", B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 7(4), 2901 (1989).
  12. "Ordering Kinetics at Surfaces", M. G. Lagally, R. Kariotis, B. S. Swartzentruber, and Y.-W. Mo, Ultramicroscopy, 31, 87 (1989).
  13. "Growth and Equilibrium Structures in the Epitaxy of Si on Si(001)", Y.-W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally, Phys. Rev. Lett. 63(21), 2393 (1989).
  14. "Scanning Tunneling Microscopy Study of Diffusion, Growth, and Coarsening of Si on Si(001)", Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 201 (1990).
  15. "Observations of Strain Effects on the Si(001) Surface Using STM", B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 210 (1990).
  16. "Model Diffraction Profiles Parallel to Rough Step Edges", R. Kariotis, B. S. Swartzentruber, and M. G. Lagally, J. Appl. Phys., 67(6), 2848 (1990).
  17. "Growth of Si on Flat and Vicinal Si(001) Surfaces: A Scanning Tunneling Microscopy Study", Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. B, 8(2), 232 (1990).
  18. "The Effect of External Stress on Si Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(3), 2658 (1990).
  19. "Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)", Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 65(8), 1020 (1990).
  20. "Direct Determination of Step and Kink Energies on Vicinal Si(001)", B. S. Swartzentruber, Y.-W. Mo, R. Kariotis, M. G. Lagally, and M. B. Webb, Phys. Rev. Lett., 65(15), 1913 (1990).
  21. "Kinetics of Strain-Induced Domain Formation at Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, in Kinetics of Ordering and Growth at Surfaces (ed. M. G. Lagally), Plenum, New York, NY (1990).
  22. "Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy Study of Si on Si(001)", M. G. Lagally, Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, and M. B. Webb, in Kinetics of Ordering and Growth at Surfaces (ed. M. G. Lagally), Plenum, New York, NY (1990).
  23. "Domain Boundary Control of Edge Roughness in Vicinal Si(001)", B. S. Swartzentruber, Y.-W. Mo, and M. G. Lagally, Appl. Phys. Lett., 58(8), 822 (1991).
  24. "Surface Step Configurations Under Strain: Kinetics and Step-Step Interactions", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, Surf. Sci., 242, 23 (1991).
  25. "The Behavior of Steps on Si(001) as a Function of Vicinality", B. S. Swartzentruber, N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. B, 47, 13432 (1993).
  26. "Variable-Temperature STM Measurements of Step Kinetics on Si(001)", N. Kitamura, B. S. Swartzentruber, M. G. Lagally, and M. B. Webb, Phys. Rev. B, 48, 5704 (1993).
  27. "New Method for Empirically Determining Surface Electronic Species from Multiple-Bias STM Images: A Multivariate Classification Approach", A. M. Bouchard, G. C. Osbourn, and B. S. Swartzentruber, Surf. Sci., 321, 276 (1994).
  28. "Kinetics of Atomic-Scale Fluctuations of Steps on Si(001) Measured with Variable-Temperature STM", B. S. Swartzentruber and M. Schacht, Surf. Sci., 322, 83 (1995).
  29. "STM Measurements of Step-Flow Kinetics During Atom Removal by Low-Energy Ion Bombardment of Si(001)", B. S. Swartzentruber, C. M. Matzke, D. L. Kendall, and J. E. Houston, Surf. Sci., 329, 83 (1995).
  30. "Initial Stages of Fe Chemical Vapor Deposition onto Si(001)", D. P. Adams, L. L. Tedder, T. M. Mayer, B. S. Swartzentruber, and E. Chason, Phys. Rev. Lett., 74, 5088 (1995).
  31. "Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy", B. S. Swartzentruber, Phys. Rev. Lett., 76, 459 (1996).
  32. "Nanometer-Scale Lithography on Si(001) using Adsorbed H as an Atomic-Layer Resist", D. P. Adams, T. M. Mayer, and B. S. Swartzentruber, J. Vac. Sci. Tech. B 14(3), 1642 (1996).
  33. "Selective Area Growth of Metal Nanostructures", D. P. Adams, T. M. Mayer, and B. S. Swartzentruber, Appl. Phys. Lett. 68, 2210 (1996).
  34. "Experimental and Theoretical Study of the Rotation Rate of Si Ad-dimers on the Si(001) Surface", B. S. Swartzentruber, A. P. Smith, and H. Jónsson, Phys. Rev. Lett. 77, 2518 (1996).
  35. "Island Structure Evolution During Chemical Vapor Deposition", D. P. Adams, T. M. Mayer, E. Chason, B. K. Kellerman, and B. S. Swartzentruber, Surf. Sci. 371, 445 (1997).
  36. "Kinetics of Si Monomer Trapping at Steps and Islands on Si(001)", B. S. Swartzentruber, Phys. Rev. B 55, 1322 (1997).
  37. "Si Ad-Dimer Interactions with Steps and Islands on Si(001)", B. S. Swartzentruber, Surf. Sci. 374, 277 (1997).
  38. "Atomic-Scale Dynamics of Atoms and Dimers on the Si(001) Surface", B. S. Swartzentruber, Surf. Sci. 386, 195 (1997).
  39. "Step Faceting at the (001) Surface of B-doped Si", J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, J. C. Hamilton, and G. L. Kellogg, Phys. Rev. Lett. 79, 4226 (1997).
  40. "Spontaneous Formation of an Ordered c(4x2)/(2x1) Domain Pattern on Ge(001)", H. J. W. Zandvliet, B. S. Swartzentruber, W. Wulfhekel, B. J. Hattink, and Bene Poelsma, Phys. Rev. B 57, 6803 (1998).
  41. "Influence of Interfacial Hydrogen on Al Thin Film Nucleation on Si", D. P. Adams, T. M. Mayer, and B. S. Swartzentruber, J. Appl. Phys. 83, 4690 (1998).
  42. "Fundamentals of Surface Step and Island Formation Mechanisms", B. S. Swartzentruber, J. Crystal Growth, 188, 1 (1998).
  43. "Detailed Energetic Interactions of Adsorbed Si Dimers on Si(001)", Joseph M. Carpinelli and B. S. Swartzentruber, Surf. Sci., 411, L828 (1998).
  44. "LEEM Measurements of Step Energies at the (001) Surface of Heavily Boron-Doped Silicon", J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, and G. L. Kellogg, Surf. Rev. and Lett., 5, 1159 (1998).
  45. "Electronic Structure Classifications Using STM Conductance Imaging", K. M. Horn, B. S. Swartzentruber, G. C. Osbourn, A. M. Bouchard, and J. W. Bartholomew, J. Appl. Phys., 84, 2487 (1998).
  46. "Modification of Si(001) Substrate Bonding by Adsorbed Ge or Si Dimer Islands", X. R. Qin, Feng Liu, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 81, 2288 (1998).
  47. "Direct Measurement of Field Effects on Surface Diffusion", J. M. Carpinelli and B. S. Swartzentruber, Phys. Rev. B, 58, 13423 (1998).
  48. “Comparisons of STM Topographic and Multispectral Conductance Images of Si(001) Surfaces”, K. M. Horn, G. C. Osbourn, and B. S. Swartzentruber, Sandia Report, SAND98-1309J (1998).
  49. "Dynamics of the Si(111) Surface Phase Transition", J. B. Hannon, H. Hibino, N. C. Bartelt, B. S. Swartzentruber, T. Ogino, and G. L. Kellogg, Nature, 405, 552 (2000).
  50. "Atom-Scale Identification of Ge/Si Intermixing on Si(001) at Submonolayer Ge Coverages", X. R. Qin, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 84, 4645 (2000).
  51. "Diffusional Kinetics of SiGe Dimers on Si(001) Using Atom-Tracking Scanning Tunneling Microscopy", X. R. Qin, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 85, 3660 (2000).
  52. "Unique Dynamic Appearance of a Ge-Si Ad-Dimer on Si(001)", Z. Y. Lu, C. Z. Wang, X. R. Qin, B. S. Swartzentruber, M. G. Lagally, and K. M. Ho, Phys. Rev. Lett., 85, 5603 (2000).
  53. "Diffusion Kinetics in the Pd/Cu(001) Surface Alloy", M. L. Grant, B. S. Swartzentruber, N. C. Bartelt, and J. B. Hannon, Phys. Rev. Lett., 86, 4588 (2001).
  54. "Diffusion on Semiconductor Surfaces", H. J. W. Zandvliet, B. Poelsema, and, B. S. Swartzentruber, Physics Today, 54(7), 40 (2001); Also published in Parity, 16, 30-37 (2001).
  55. “Vacancy-Mediated and Exchange Diffusion in a Pb/Cu(111) surface alloy: Concurrent Diffusion on Two Length Scales”, M. L. Anderson, M. J. D’Amato, P. J. Feibelman, and B. S. Swartzentruber, Phys. Rev. Lett., 90, 126102 (2003).
  56. “Electric Field Effects on Surface Dynamics: Si Ad-Dimer Diffusion and Rotation on Si(001)”, T. R. Mattsson, B. S. Swartzentruber, R. R. Stumpf, and P. J. Feibelman, Surf. Sci., (in press).
  57. “Diffusion of Vacancies in Metal Surfaces: Theory and Experiment”, R. van Gastel, J. W. M. Frenken, B. S. Swartzentruber, E. Somfai, and W. van Saarloos, in The Chemical Physics of Solid Surfaces (ed. P. Woodruff),  (in press).
  58. “The Importance of Pb-Vacancy Attractions on Diffusion in the Pb/Cu(001) Surface Alloy”, M. L. Anderson, N. C. Bartelt, and B. S. Swartzentruber, Surf. Sci., (in press).
  59. “Changing the Diffusion Mechanism of Ge-Si Dimers on Si(001) Using Electric Field”, L. M. Sanders, R. Stumpf, T. R. Mattsson, and B. S. Swartzentruber, (submitted).
  60. “Diffusie van dimeren op halfgeleideroppervlakken”, Harold J. W. Zandvliet, Bene Poelsema, and Brian S. Swartzentruber, Nederlands Tijdschrift voor Natuurkunde, 69(5), 158 (2003).

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Last modified August 2002.
Brian S. Swartzentruber <bsswart@sandia.gov>
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