E-VECSEL: Electrically Injected Configurations
Electrical pumping is harder than optical.
Current spreading and heating are major issues.
Processing is a pain.
Weak 860 nm and 430 nm pulsed operation demonstrated.
~50 µW average power of 430 nm
Through-the-substrate designs look promising.
Current spreading and heat removal easier.
Requires transparent substrate (see below).
Future Work
Through-the-substrate VECSELs @ 980 nm and 490 nm
Nitride VECSELs?
Electrically Injected (IR) - VECSEL Emission (~860nm)
General Design Observations
N on P polarity
Approx. 8 DBR pairs
Oxide Apertures extend beyond metal contacts.
Offset gain and cavity based on drive current and heat sinking.
Electroluminescence Images of 50 micron devices
Typical P on N design (intensity not calibrated)
A Better Approach To E-VECSEL: Pump Through the Substrate
THE VECSEL TEAM
Points of Contact:
| W. J. Alford | Andy Allerman | Ron Allman | Mike Bannis |
| Weng Chow | Mary Crawford | Peter Esherick | Art Fischer |
| T. D. Raymond | Darwin Serkland | Arlee Smith | Channy Wong |
Related Links:
VECSEL: The Other Surface Emitting Semiconductor Laser
VECSELs: Growing the Semiconductor Layers
VECSEL: Optically Pumped Configurations