We have the capability of doing semiconductor process and device simulations on a device scale, using commercial TCAD tools:
Two-dimensional process modeling includes the following steps:
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The resulting structures are represented on a triangular mesh. Each triangle is a given material with associated properties. Dopant (e.g. boron, arsenic, and phosphorus) and point-defect concentrations (interstitials and vacancies) are solved at each node in the mesh. Stress due to thermal processing can also be calculated at each node.
Structures created by process simulation can be input for two- and three-dimensional device simulations. Device structures can also be constructed without doing full process simulations.
The device simulations solve Poisson’s equation and the current continuity equations for electrons and holes. The solution variables are electrostatic potential, electron concentration, and hole concentration.
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Optionally the lattice heat and energy balance equations can also be solved.
The electrical response of devices to photo stimuli can also be simulated.
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