Reliability Physics Program
- Technology development & qualification
- Develop validated models for describing
long-term reliability of technologies and
quantify technology reliability
- Work with technology owners to identify
ways to improve reliability
- Provide input for product qualification
- Identify reliability issues & trends in
state of the art commercial technologies
- Help define the technology path for MDL
products by developing reliability basis
for next generation MDL technology
|
Oxide Breakdown
- CMOS6R oxide meets technology reliability
goals based on current database and model parameter
— FIT ~ 10 at 5.5V, 125C
consistent with satellite requirements
— DH ~ 1.2 eV, g 0 ~0.6-0.8 eV-cm/MV, g 1 ~0.07-0.08 eV-cm/MV
- CMOS7 oxides being baselined
— TDDB data vs. field and temperature
being developed to construct a wearout model
Hot Carrier Effects
Electromigration
-
Reliability estimates of MDL
technologies indicate long EM lifetime
CMOS6R t 0.1 > 500 yrs E=0.87 eV, n=2.04
CMOS7 t 0.1 > 20 yrs E=0.64 eV, n=1.74
-
CMOS6R metals indicate mixed
grain boundary (0.5 eV) and lattice (1.2 eV)
transport, consistent w/ partially bamboo structure.
N fits well w/ published values
-
CMOS7 metals indicate grain
boundary transport. May be due to smaller grain
than CMOS 6, N within published ranges
-
Large series of CMOS6R experiments
are underway w/ new test structures
Stress Voiding
No evidence of stress voiding has been
observed in MDL CMOS6R, CMOS6RA, or CMOS7 technologies.
-
crack shape in evaporated
metal
-
can grow during processing
or take years
-
non-Arrhenius acceleration
-
acceleration factor is small
.
|
| |
|
Please address comments or questions to mstcinfo@sandia.gov.
|
|
|
|
|
|
|
|
