Graphene on Silicon Carbide Growth
Graphene is a promising advanced electronics device material. The development of large-area high-mobility graphene on suitable substrates is a key challenge. Taisuke Ohta (1114) and Norm Bartelt (8656) used coordinated low energy electron microscopy measurements and computational modeling to further the scientific understanding of graphene on silicon carbide growth. Their understanding of the role of atomic steps on silicon carbide led to an engineered step-flow growth route for producing large-area graphene films with improved domain size and mobility characteristics.